- Manufacturer：
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- onsemi (1)
- Capacitance @ Vr, F：
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- Diode Type：
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- Operating Temperature：
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- Package / Case：
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- Power Dissipation (Max)：
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- Product Status：
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14 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
onsemi | SBD SERIES 35MA 10V |
|
195,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE SCHOTTK... |
|
1,953
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
|
428
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | RF DIODE STANDAR... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | SI NOISE HERMETI... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | SI NOISE HERMETI... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | SI NOISE NON HERM... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | SI NOISE NON HERM... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | SI NOISE HERMETI... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | GAAS GUNN EPI DOW... |
0.000
|
35,000
In-stock
|
Details Buy Now |
