- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- FET Feature：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power - Max：
-
- Product Status：
-
- Rds On (Max) @ Id, Vgs：
-
15 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
EPC Space | GAN FET HEMT200V 4A... |
|
41
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
6
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Microchip Technology | PM-MOSFET-SIC-SBD... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Nexperia | MOSFET 2P-CH 30V 2.3... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Nexperia | MOSFET N/P-CH 30V 8... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Nexperia | MOSFET 2N-CH 30V 8S... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
ROHM Semiconductor | 4V DRIVE NCH+NCH M... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
NXP Semiconductors | MOSFET 2N-CH 30V 8S... |
0.000
|
35,000
In-stock
|
Details Buy Now |
