Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Product Status:
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
TK10A60W5,S5VX Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 9.7...
$2.1400
RFQ
54
In-stock
Details Buy Now
IRC634PBF Vishay
MOSFET N-CH 250V 8.1...
0.000
RFQ
35,000
In-stock
Details Buy Now
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