Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Package / Case:
Power Dissipation (Max):
Product Status:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
RS1L180GNTB ROHM Semiconductor
MOSFET N-CH 60V 18A...
$2.7700
RFQ
35,000
In-stock
Details Buy Now
TPCA8A01-H(TE12L,Q Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 30V 36A...
0.000
RFQ
35,000
In-stock
Details Buy Now
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