Drain to Source Voltage (Vdss):
Gate Charge (Qg) (Max) @ Vgs:
Input Capacitance (Ciss) (Max) @ Vds:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Image Part Manufacturer Description Price Stock Action
TW015N65C,S1F Toshiba Electronic Devices and Storage Corporation
G3 650V SIC-MOSFET ...
$58.0900
RFQ
161
In-stock
Details Buy Now
TW015N120C,S1F Toshiba Electronic Devices and Storage Corporation
G3 1200V SIC-MOSFET...
$71.2800
RFQ
133
In-stock
Details Buy Now
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