Current - Continuous Drain (Id) @ 25°C:
Drive Voltage (Max Rds On, Min Rds On):
FET Feature:
Input Capacitance (Ciss) (Max) @ Vds:
Operating Temperature:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
TW060N120C,S1F Toshiba Electronic Devices and Storage Corporation
G3 1200V SIC-MOSFET...
$20.7900
RFQ
145
In-stock
Details Buy Now
IMBG120R045M1HXTMA1 Infineon Technologies
SICFET N-CH 1.2KV 4...
$21.5000
RFQ
35,000
In-stock
Details Buy Now
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