Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
Drive Voltage (Max Rds On, Min Rds On):
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Operating Temperature:
Power Dissipation (Max):
Rds On (Max) @ Id, Vgs:
Supplier Device Package:
Vgs (Max):
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
TK100L60W,VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 100...
$36.4300
RFQ
8
In-stock
Details Buy Now
IPB010N06NATMA1 Infineon Technologies
MOSFET N-CH 60V 45A...
$8.6200
RFQ
35,000
In-stock
Details Buy Now
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