Current - Continuous Drain (Id) @ 25°C:
Drain to Source Voltage (Vdss):
FET Feature:
Gate Charge (Qg) (Max) @ Vgs:
Power Dissipation (Max):
Supplier Device Package:
Vgs(th) (Max) @ Id:
Image Part Manufacturer Description Price Stock Action
TK6P65W,RQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 650V 5.8...
$1.4700
RFQ
1,294
In-stock
Details Buy Now
TK6P60W,RVQ Toshiba Electronic Devices and Storage Corporation
MOSFET N CH 600V 6.2...
$0.9735
RFQ
35,000
In-stock
Details Buy Now
TK6Q65W,S1Q Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 650V 5.8...
$1.2442
RFQ
35,000
In-stock
Details Buy Now
TK6A65W,S5X Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 650V 5.8...
$1.5370
RFQ
35,000
In-stock
Details Buy Now
TK6Q60W,S1VQ Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 6.2...
$1.7709
RFQ
35,000
In-stock
Details Buy Now
TK6A60W,S4VX Toshiba Electronic Devices and Storage Corporation
MOSFET N-CH 600V 6.2...
$2.0020
RFQ
35,000
In-stock
Details Buy Now
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