- Current - Continuous Drain (Id) @ 25°C：
-
- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs(th) (Max) @ Id：
-
6 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | PB-F POWER MOSFET... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N CH 600V 8A... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 7.8... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 650V 7.8... |
|
7
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 8A... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
Toshiba Electronic Devices and Storage Corporation | MOSFET N-CH 600V 8A... |
|
35,000
In-stock
|
Details Buy Now |
