- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- FET Feature：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs (Max)：
-
3 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Infineon Technologies | SILICON CARBIDE ... |
|
133
In-stock
|
Details Buy Now | ||
|
|
Infineon Technologies | SILICON CARBIDE ... |
|
224
In-stock
|
Details Buy Now | ||
|
|
Infineon Technologies | SICFET N-CH 1.2KV 4... |
|
35,000
In-stock
|
Details Buy Now |
