- Current - Continuous Drain (Id) @ 25°C：
-
- Drain to Source Voltage (Vdss)：
-
- FET Type：
-
- Gate Charge (Qg) (Max) @ Vgs：
-
- Input Capacitance (Ciss) (Max) @ Vds：
-
- Mounting Type：
-
- Operating Temperature：
-
- Package / Case：
-
- Power Dissipation (Max)：
-
- Rds On (Max) @ Id, Vgs：
-
- Supplier Device Package：
-
- Vgs (Max)：
-
- Vgs(th) (Max) @ Id：
-
20 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
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Infineon Technologies | SILICON CARBIDE ... |
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160
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Infineon Technologies | SILICON CARBIDE ... |
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200
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88
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Infineon Technologies | SILICON CARBIDE ... |
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Infineon Technologies | 1200V COOLSIC MOSF... |
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Infineon Technologies | 1200V COOLSIC MOSF... |
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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Infineon Technologies | SILICON CARBIDE ... |
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35,000
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