- Manufacturer：
-
- onsemi (2)
- Gate Charge：
-
- Operating Temperature：
-
- Package / Case：
-
- Product Status：
-
- Reverse Recovery Time (trr)：
-
- Supplier Device Package：
-
- Switching Energy：
-
- Test Condition：
-
- Vce(on) (Max) @ Vge, Ic：
-
- Voltage - Collector Emitter Breakdown (Max)：
-
3 Records
| Image | Part | Manufacturer | Description | Price | Stock | Action | |
|---|---|---|---|---|---|---|---|
|
Toshiba Electronic Devices and Storage Corporation | PB-F DISCRETE IGB... |
|
35,000
In-stock
|
Details Buy Now | ||
|
|
onsemi | IGBT 1200V 40A 310W TO... |
0.000
|
35,000
In-stock
|
Details Buy Now | ||
|
|
onsemi | IGBT 1200V 40A 310W TO... |
0.000
|
35,000
In-stock
|
Details Buy Now |
