IPP028N08N3GXKSA1
- Mfr.Part #
- IPP028N08N3GXKSA1
- Manufacturer
- Infineon Technologies
- Package/Case
- TO-220-3
- Datasheet
-
IPP028N08N3GXKSA1
- Description
- MOSFET N-CH 80V 100A TO220-3
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- Infineon Technologies
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 100A (Tc)
- Drain to Source Voltage (Vdss) :
- 80 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 6V, 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 206 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 14200 pF @ 40 V
- Mounting Type :
- Through Hole
- Operating Temperature :
- -55°C ~ 175°C (TJ)
- Package / Case :
- TO-220-3
- Power Dissipation (Max) :
- 300W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 2.8mOhm @ 100A, 10V
- Supplier Device Package :
- PG-TO220-3
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±20V
- Vgs(th) (Max) @ Id :
- 3.5V @ 270µA
- Datasheets
- IPP028N08N3GXKSA1
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| Global Express | |||
|---|---|---|---|
| Express Delivery | Global delivery 3-5 working days. |  |  |
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Our QC department staff would inspect and ensure all of the parts from YST ELECTRONIC are new & original in accordance with original manufacturer datasheet.
We have an excellent and complete test procedure for all of the parts ready to be out of our warehouse before delivery.
The test report that required by customers are always available.
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