FDB33N25TM
- Mfr.Part #
- FDB33N25TM
- Manufacturer
- Fairchild Semiconductor
- Package/Case
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Datasheet
-
FDB33N25TM
- Description
- POWER FIELD-EFFECT TRANSISTOR, 3
- Stock
- 35000
- Quality
-
- Social media
-
- Manufacturer :
- Fairchild Semiconductor
- Product Category :
- Transistors - FETs, MOSFETs - Single
- Current - Continuous Drain (Id) @ 25°C :
- 33A (Tc)
- Drain to Source Voltage (Vdss) :
- 250 V
- Drive Voltage (Max Rds On, Min Rds On) :
- 10V
- FET Feature :
- -
- FET Type :
- N-Channel
- Gate Charge (Qg) (Max) @ Vgs :
- 48 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds :
- 2135 pF @ 25 V
- Mounting Type :
- Surface Mount
- Operating Temperature :
- -55°C ~ 150°C (TJ)
- Package / Case :
- TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
- Power Dissipation (Max) :
- 235W (Tc)
- Product Status :
- Active
- Rds On (Max) @ Id, Vgs :
- 94mOhm @ 16.5A, 10V
- Supplier Device Package :
- D2PAK (TO-263)
- Technology :
- MOSFET (Metal Oxide)
- Vgs (Max) :
- ±30V
- Vgs(th) (Max) @ Id :
- 5V @ 250µA
- Datasheets
- FDB33N25TM
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| Express Delivery | Global delivery 3-5 working days. |  |  |
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| Part | Manufacturer | Stock | Description |
|---|---|---|---|
| FDB33N25 | FAIRCHILD | 28,808 | - |
| FDB33N25TM | onsemi | 35,000 | MOSFET N-CH 250V 33A D2PAK |
| FDB3502 | onsemi | 35,000 | MOSFET N-CH 75V 6A/14A TO263AB |
| FDB3632 | onsemi | 35,000 | MOSFET N-CH 100V 12A/80A D2PAK |
| FDB3632-F085 | onsemi | 35,000 | MOSFET N-CH 100V 12A TO263AB |
| FDB3632_NL | FAIRCHILD | 28,808 | - |
| FDB3632_SB82115 | onsemi | 35,000 | MOSFET N-CH 100V 12A/80A D2PAK |
| FDB3652 | onsemi | 35,000 | MOSFET N-CH 100V 9A/61A D2PAK |
| FDB3652-F085 | onsemi | 229 | N-CHANNEL POWERTRENCH MOSFET, 10 |
| FDB3652-F085 | onsemi | 35,000 | MOSFET N-CH 100V 9A/61A TO263AB |
